CXMT targets end-2026 server memory rollout with denser 4F design - SCMP
Stockwhiz•12/10/2026•07:39 ET
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Key Highlights
- ➤CXMT targets year-end DDR5 RDIMM rollout for enterprise-grade servers
- ➤CXMT’s 4F design increases storage density through smaller memory-cell footprints
- ➤CXMT’s Vertical Surrounding Gate transistor requires redesigned manufacturing processes
- ➤SK Hynix (SKHY) unveiled its 4F square road map in 2025
- ➤Samsung Electronics plans sub-10-nanometre 4F DRAM mass production by 2028
Expert Statements
Cao Kanyu, President of CXMT
“The move from 6F square to 4F square also represents a fundamental transition from horizontal to vertical transistor channels.”
ChangXin Memory Technologies plans an end-2026 server-memory rollout using its 4F square cell architecture, a denser design also being pursued by Samsung Electronics and SK Hynix.
Mainstream commercial dynamic random-access memory currently uses a 6F square-cell structure. CXMT’s proposed design reduces each memory cell’s area to four square F, with F representing the minimum line width of a semiconductor.
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