Enphase Energy and Infineon Announce World’s First 900 V GaN Bidirectional Switch Devices for AI Data Center Solid-State Transformers
Key Highlights
- ➤Enphase (ENPH) will deploy 900 V GaN bidirectional switches in IQ SST development builds
- ➤900 V devices extend GaN beyond 650 V while retaining high-frequency switching capabilities
- ➤IQ SST targets AI data centers with fewer converters, lower losses, and higher power density
- ➤Devices enable commercial solar inverter designs for 480 V U.S. and 400 V international applications
- ➤Production qualification is expected after successful testing and current IQ SST integration
Expert Statements
Johannes Schoiswohl, Senior vice president and head of GaN Systems Business Line at Infineon
“Enphase asks more of our technology than almost anyone, and medium-voltage solid-state transformers are exactly where high-voltage GaN proves its value”
Johannes Schoiswohl, Senior vice president and head of GaN Systems Business Line at Infineon
“Moving past 650 V lets system designers strip cost and loss out of the architecture rather than optimizing around it.”
Hans van Antwerpen, Senior vice president and chief technology officer at Enphase Energy
“GaN is not new to us. It has been running in Enphase IQ9 Microinverters in the field, and that field data is why we trust it in a megawatt-class system.”
Hans van Antwerpen, Senior vice president and chief technology officer at Enphase Energy
“Moving to 900 V gives us more voltage headroom without giving up high-frequency switching, and it allows us to stay with components rated below 1 kV while reducing the number of converters in the system.”
Hans van Antwerpen, Senior vice president and chief technology officer at Enphase Energy
“Fewer parts in the power path means higher efficiency and fewer things that can fail.”
FREMONT, Calif., Oct. 26, 2026 (GLOBE NEWSWIRE) -- Enphase Energy, Inc. (NASDAQ: ENPH), a global energy technology company, and Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced that Enphase will deploy the world’s first 900 V gallium nitride (GaN) monolithic bidirectional switch (BDS) devices, designed to operate in Enphase solid-state transformer power modules. The devices extend GaN technology to 900 V while retaining the high-frequency switching capabilities that enable compact, efficient power conversion.
Enphase has pioneered the system-level development and demonstration, building on more than 10 years of in-house research into GaN power conversion, with device technology and engineering expertise from Infineon. Enphase is among the first to bring 650 V GaN BDS devices into volume production power electronics, and GaN HEMT technology is already operating in Enphase IQ9™ Microinverters deployed in the field. Extending that work with Infineon beyond 650 V, using Infineon's CoolGaN™ bidirectional switch portfolio, opens the door further to medium-voltage systems.
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