Microchip Expands Space Power Portfolio with New Radiation-Tolerant GaN Point-of-Load Converter
Key Highlights
- ➤POL-05-20S-T delivers up to 20A using radiation-tolerant GaN power devices
- ➤POL-05-20S-T operates from 4.75V to 13.2V input and 0.7V to 5V output
- ➤Device withstands TID up to 50 krad and SEE LET up to 43 MeV·cm²/mg
- ➤POL-05-20S-T is available in production quantities
- ➤Microchip (MCHP) expands its space power portfolio with a high-current GaN converter
Expert Statements
Ronan Dillon, Senior director of Microchip’s high-reliability and RF business unit
“Space designers are integrating increasingly powerful digital processing, creating demand for compact power solutions that can respond quickly, while operating reliably in harsh environments.”
Ronan Dillon, Senior director of Microchip’s high-reliability and RF business unit
“The POL-05-20S-T extends our space power portfolio with a high-current GaN solution that helps customers achieve high power density, design flexibility and system-level reliability.”
CHANDLER, Ariz., Oct. 14, 2026 (GLOBE NEWSWIRE) -- Microchip Technology (Nasdaq: MCHP) today announces the POL-05-20S-T, a radiation-tolerant, Point-of-Load (POL) converter, designed to address the demanding power requirements of space processing applications. The new device uses Gallium Nitride (GaN) power devices to deliver up to 20A of output current with high efficiency and power density.
The converter is supplied in a compact, 25g surface-mount package measuring 1.51” x 1.51” x 0.45”. By delivering 20A in this footprint, the device helps engineers manage the size, power and energy constraints that accompany increasingly capable onboard processing systems. The GaN-based design is intended to provide a combination of high efficiency, high power density and continuous current capability for challenging space power applications.
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