Navitas Unveils Next-Generation Ultra-High-Voltage SiC Power Module to Advance Energy and Grid Infrastructure Efficiency
Key Highlights
- ➤2300 V, 8 mΩ full-bridge SiCPAK module family launched for energy infrastructure
- ➤Samples available immediately, including pre-applied TIM and high-current variants
- ➤AlN AMB substrate supports over 5 kV isolation and superior heat spreading
- ➤Epoxy-resin potting delivers 10x higher thermal conductivity versus silicone gel
- ➤AEC-Plus qualification extends beyond AEC-Q101 and JEDEC reliability requirements
Expert Statements
Paul Wheeler, VP & GM of Navitas' SiC Business Unit
“Our fourth-generation GeneSiC Trench-Assisted Planar architecture continues to push the limits of what's possible in ultra-high voltage SiC”
Paul Wheeler, VP & GM of Navitas' SiC Business Unit
“This new 2300 V module delivers a leading RDS(ON) of any device using the SiCPAK form factor, giving system designers a proven, reliability-tested building block for the solid-state transformers and energy storage systems that are reshaping grid and AI data center infrastructure.”
Latest 2300 V, 8 mΩ full-bridge SiCPAK™ G power module leverages proprietary GeneSiC™ Trench-Assisted Planar™ technology to deliver the industry's leading R(DS)(O)(N), enabling higher and power density for solid-state transformers, grid-scale battery energy storage systems, solar inverters, and megawatt charging infrastructure
TORRANCE, Calif., Oct. 21, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), a leader in next-generation power semiconductors and power delivery solutions, pioneering GaN, high-voltage and ultra-high-voltage SiC, and IVR technologies, today announced an ultra-high-voltage (UHV) SiC power module family for advanced energy and grid infrastructure.
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