onsemi's EliteSiC M4 Pushes Power Density Higher as Energy Demands Grow
Key Highlights
- ➤EliteSiC M4 raises power density up to 30% versus onsemi’s previous generation
- ➤EliteSiC M4 lowers losses by 35% versus onsemi’s previous generation
- ➤750 V automotive traction bare die available now
- ➤Additional EliteSiC M4 voltage offerings up to 1200 V expected beginning in 2027
- ➤EliteSiC M4 supports AI data centers, electric vehicles and energy infrastructure
Expert Statements
Achyut Shah, Group President of the Power Solutions Group at onsemi
“Power requirements are rising faster than the physical infrastructure around them. The next generation of power systems will require the ability to deliver more power, more efficiently and in less space”
Achyut Shah, Group President of the Power Solutions Group at onsemi
“With more than 16 billion miles of proven silicon carbide operation in vehicles around the world, EliteSiC M4 is combining that foundation of reliability with the performance customers need to rethink the balance among power, efficiency, size and cost.”
Harald Hartel, Vice President, BU eMotor Controls at Schaeffler AG
“As vehicle power levels increase, traction-inverter design becomes a tighter balancing act between efficiency, thermal performance, power density and reliability.”
Harald Hartel, Vice President, BU eMotor Controls at Schaeffler AG
“Higher efficiency and power density can give us greater flexibility to optimize the traction inverter for range, thermal performance and packaging, which are increasingly important as electrified powertrains become more demanding.”
Summary onsemi introduced EliteSiC™ M4, its fourth-generation silicon carbide platform built on a trench architecture, delivering up to 30% higher power density and 35% lower losses compared with the previous generation. By advancing conduction and switching performance, EliteSiC M4 enables more efficient, power-dense systems for AI data centers, electric vehicles and energy infrastructure.
News Highlights: * EliteSiC™ M4 delivers higher power density and lower losses enabling customers to increase performance and efficiency while optimizing system size and managing cooling requirements * Extends onsemi’s proven SiC leadership, building on more than 16 billion miles of real-world operation * EliteSiC™ M4 750 V automotive traction bare die available now, with additional voltage options up to 1200 V expected in 2027 SCOTTSDALE, Ariz., Nov. 10, 2026 (GLOBE NEWSWIRE) -- onsemi (Nasdaq: ON) today introduced EliteSiC™ M4, its fourth-generation silicon carbide (SiC) platform built on a trench architecture and designed to set a new performance benchmark for next-generation power systems. With industry-leading conduction and switching performance, EliteSiC M4 gives customers greater design freedom to increase power density and efficiency up to 30% and lower losses by 35%, enabling more efficient, power-dense systems across EVs, AI data center and industrial applications.
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