U.S. Government Selects Navitas to Develop Next-Generation 10 kV SiC Power Semiconductors

TORRANCE, Calif., Sept. 28, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast(™) gallium nitride (GaN) and GeneSiC(™) silicon carbide (SiC) power semiconductors, today announced it has been awarded the ALATTIS (Accelerated, Large-Area, 10 kV SiC IGBT) program to develop next-generation 10 kV silicon carbide (SiC) power semiconductor technology.

Following a rigorous competitive evaluation, the U.S. Army selected Navitas from among leading U.S. silicon carbide technology companies in recognition of its unmatched leadership in UHV SiC innovation, proven ability to deliver defense-grade performance and reliability, and resilient U.S.-anchored manufacturing ecosystem for advanced power semiconductor technologies.